Ultra-low voltage double-layer transistor research progresses

TFT thin-film transistor film transistor (Thin-filmtransistors, TFTs) are an important class of semiconductor devices, flat panel displays, sensors and other areas with a wide range of application. In recent years, wide band gap semiconductor oxide film due to its low-temperature, high electron mobility, transparent to visible light, etc., in the field of thin film transistor attracted widespread interest in the study. As the conventional SiO2 gate dielectric capacitive coupling is weak, thin-film transistor current typical operating voltage is generally greater than 10V, greatly restricted MAX313CSE in their portable applications. Studies have shown that ionic liquids, ionic gels (IonGels) with up to 10?F/cm2 low-frequency electric double layer capacitors. Researchers use of such double-layer gate dielectrics produced only 1.0V-2.0V operating voltage organic thin-film transistors. But so far, rarely used type of inorganic oxide gate dielectric semiconductor transistor devices developed. 2009, CAS Ningbo Institute of Material Technology and Engineering, Wan Qing group consisting AD825ARZ of SiO2 particles in the nano-porous membrane system observed a huge double-layer capacitance, and use the film as the gate dielectric media, has successfully developed high-performance, low-transparent thin film transistor, its voltage is less than 1.5V (Appl.Phys.Lett.95, 152114 (2009); Appl.Phys.Lett.96, 043114 (2010)). The paper is NatureAsiaMaterials was entitled transparenttransistors: lowpower, highperformance's Highlight story. On this basis, the research group has succeeded in the paper substrate, all-temperature process, the paper successfully developed high-performance transistors, and through the oxygen BTS711L1 pressure-control technology to achieve enhanced and depletion mode transistor control (IEEETrans.onElectronDevices. 57,2258 (2010)). In addition, the research group is also a simple way to soak the membrane in SiO2 nanoparticles into Li, H plasma, significantly enhanced the double-layer gate dielectric capacitance. Then he successfully developed vertical structure with ultra-low voltage oxide double-layer thin-film transistor (IEEEElectronDeviceLetters, 31,1263 (2010); Appl.Phys.Lett.97, 052104 (2010)). Recently, the research group has developed a self-assembly process, only the use of a mask, a dual-magnetron sputtering on the gate dielectric layer deposited on ITO-channel, ITO source / drain electrodes to complete the transistor production (IEEEElectronDeviceLetters.31, 1137 (2010)). In addition, the research group that also used a single SnO2 nanowires as the transistor channel, has successfully developed ultra-low pressure, fully transparent nanowire transistors double layer (JournalofMaterialsChemistry, 20,8010 (2010)). The oxide semiconductor-based ultra-low voltage double-layer transistor in low-cost, portable DS1210S sensors, display devices have wide applications field.